page 1 of 7 general description parameter units ghz db db db db db db dbm dbm vdc ma min. 20.0 6.0 4.0 12.0 - 30.0 - - - - - typ. - 12.0 10.0 20.0 +/-4.0 45.0 2.0 +9.0 +16.0 +3.0 35 max. 40.0 - - - - - 3.0 - - +5.0 50 supply voltage (vd) supply current (id) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) 1 +7.0 vdc 70 ma +12 dbm -65 to +165 oc -55 to +85 oc +175 oc chip device layout (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. mimix broadbands three stage 20.0-40.0 ghz gaas mmic low noise amplifier has a small signal gain of 20.0 db with a noise figure of 2.0 db across the band. this mmic uses mimix broadbands gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. electrical characteristics (ambient temperature t = 25 o c) absolute maximum ratings frequency range (f ) input return loss (s11) @ 22.0-36.0 ghz output return loss (s22) @ 22.0-36.0 ghz small signal gain (s21) gain flatness ( s21) reverse isolation (s12) noise figure (nf) @ 24.0-40.0 ghz output power for 1 db compression (p1db) @ 5.0v output third order intercept point (oip3) @ 5.0v drain bias voltage (vd) supply current (id) (vd=3.0v or 5.0v) (2) unless otherwise indicated min/max over 20.0-40.0 ghz and biased at vd=5v, id=50ma. 2 2 2 2 2 20.0-40.0 ghz gaas mmic low noise amplifier features self bias architecture small size 3.0 or 5.0 v operation 20.0 db small signal gain 2.0 db noise figure +9.0 dbm p1db compression point 100% on-wafer rf, dc and noise figure testing 100% visual inspection to mil-std-883 method 2010 january 2010 - rev 18-jan-10 l1000-bd
20.0-40.0 ghz gaas mmic low noise amplifier page 2 of 7 low noise amplifier measurements (on-wafer 1 ) l1000-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 18-jan-10 note [1] measurements C on-wafer data has been taken using bias conditions as shown. measurements are referenced 150 um in from rf in/out pad edge. for optimum performance mimix t-pad transition is recommended. for additional information see the mimix t-pad transition application note. XL1000-BD, vd=3.0 v, id=35 ma (~1000 devices) 1 6 1 8 2 0 2 2 2 4 2 6 6 8 1 0 1 2 1 4 1 6 1 8 . 0 2 0 . 0 2 2 . 0 2 4 . 0 2 6 . 0 2 8 . 0 3 0 . 0 3 2 . 0 3 4 . 0 36 . 0 3 8 . 0 4 0 . 0 frequency (ghz) gain (db) m a x m e d i a n m e a n mi n XL1000-BD, vd=3.0 v, id=35 ma (~1000 devices) 4 0 - 3 0 - 2 0 - 1 0 0 - 8 0 - 7 0 - 6 0 - 5 0 - 4 0 18 . 0 20 . 0 2 2 . 0 2 4 . 0 26 . 0 28 . 0 3 0 . 0 3 2 . 0 34 . 0 36 . 0 3 8 . 0 4 0 . 0 frequency (ghz) reverse isolation (db) m a x m e d i a n m e a n - 3 s i g m a XL1000-BD, vd=3.0 v, id=35 ma (~1000 devices) - 1 5 - 1 0 - 5 0 - 3 5 - 3 0 - 2 5 - 2 0 18 . 0 20 . 0 2 2 . 0 24 . 0 2 6 . 0 28 . 0 30 . 0 3 2 . 0 34 . 0 3 6 . 0 38 . 0 40 . 0 frequency (ghz) input return loss (db) m a x m ed i a n m ea n - 3 s i g m a XL1000-BD, vd=3.0 v, id=35 ma (~1000 devices) -1 5 -1 0 - 5 0 -3 0 -2 5 -2 0 18 . 0 20 . 0 22 . 0 24 . 0 26 . 0 28 . 0 30 . 0 32 . 0 34 . 0 36 . 0 38 . 0 40 . 0 frequency (ghz) output return loss (db) m a x m ed i a n m ea n -3 s i g m a XL1000-BD, vd=3.0 v, id=50 ma (~130 devices) 7 0 8 . 0 9 . 0 1 0 . 0 1 1 . 0 1 2 . 0 1 3 . 0 3 . 0 4 . 0 5 . 0 6 . 0 7 . 0 1 8 . 0 2 0 . 0 2 2 . 0 2 4 . 0 2 6 . 0 2 8 . 0 3 0 . 0 3 2 . 0 34 . 0 3 6 . 0 3 8 . 0 4 0 . 0 frequency (ghz) output power psat (dbm) m a x m e d i a n m e a n - 3 s i g m a XL1000-BD, vd=3.0 v (18,935 devices) 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 5 . 0 5 . 5 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 20 . 0 2 2 . 0 24 . 0 26 . 0 2 8 . 0 30 . 0 32 . 0 34 . 0 3 6 . 0 38 . 0 4 0 . 0 frequency (ghz) noise figure (db) m a x m ed i a n m ea n m i n
20.0-40.0 ghz gaas mmic low noise amplifier page 3 of 7 low noise amplifier measurements (on-wafer 1 ) (cont.) l1000-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 18-jan-10 note [1] measurements C on-wafer data has been taken using bias conditions as shown. measurements are referenced 150 um in from rf in/out pad edge. for optimum performance mimix t-pad transition is recommended. for additional information see the mimix t-pad transition application note. XL1000-BD, vd=5.0 v, id=50 ma (~19,300 devices) 1 8 2 0 2 2 2 4 2 6 2 8 4 6 8 1 0 1 2 1 4 1 6 18 . 0 20 . 0 22 . 0 24 . 0 26 . 0 28 . 0 30 . 0 32 . 0 34 . 0 3 6 . 0 38 . 0 4 0 . 0 frequency (ghz) gain (db) m a x m e d i a n m ea n - 3 s i g m a XL1000-BD, vd=5.0 v, id=50 ma (~19,300 devices) - 3 0 - 2 0 - 1 0 0 - 8 0 - 7 0 - 6 0 - 5 0 - 4 0 18 . 0 20 . 0 22 . 0 24 . 0 26 . 0 28 . 0 3 0 . 0 32 . 0 34 . 0 36 . 0 38 . 0 40 . 0 frequency (ghz) reverse isolation (db) + 3 s i g m a m ed i a n m ea n - 3 s i g m a XL1000-BD, vd=5.0 v, id=50 ma (~19,300 devices) - 2 0 - 1 5 - 1 0 - 5 0 - 4 5 - 4 0 - 3 5 - 3 0 - 2 5 18 . 0 2 0 . 0 2 2 . 0 2 4 . 0 26 . 0 2 8 . 0 3 0 . 0 32 . 0 3 4 . 0 3 6 . 0 3 8 . 0 40 . 0 frequency (ghz) input return loss (db) m a x m ed i a n m ea n - 3 s i g m a XL1000-BD, vd=5.0 v, id=50 ma (~19,300 devices) - 2 0 - 1 5 - 1 0 - 5 0 - 4 0 - 3 5 - 3 0 - 2 5 18 . 0 2 0 . 0 22 . 0 2 4 . 0 26 . 0 2 8 . 0 3 0 . 0 32 . 0 3 4 . 0 36 . 0 3 8 . 0 40 . 0 frequency (ghz) output return loss (db) m a x m e d i a n m e a n - 3 s i g m a XL1000-BD, vd=5.0 v, id=50 ma (~130 devices) 1 0 0 1 1 . 0 1 2 . 0 1 3 . 0 1 4 . 0 1 5 . 0 1 6 . 0 6 . 0 7 . 0 8 . 0 9 . 0 1 0 . 0 1 8 . 0 20 . 0 2 2 . 0 2 4 . 0 26 . 0 28 . 0 3 0 . 0 3 2 . 0 34 . 0 3 6 . 0 3 8 . 0 4 0 . 0 frequency (ghz) output power psat (dbm) m a x m e d i a n m ea n - 3 s i g m a XL1000-BD, vd=5.0 v, id=50 ma (~4170 devices) 2 0 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 5 . 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 1 8 . 0 2 0 . 0 2 2 . 0 2 4 . 0 2 6 . 0 2 8 . 0 3 0 . 0 3 2 . 0 3 4 . 0 36 . 0 38 . 0 4 0 . 0 frequency (ghz) noise figure (db) m a x m e d i a n m e a n -3 s i g m a
mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 18-jan-10 20.0-40.0 ghz gaas mmic low noise amplifier page 4 of 7 s-parameters (on-wafer 1 ) l1000-bd note [1] s-parameters C on-wafer s-parameters have been taken using bias conditions as shown. measurements are referenced 150 um in from rf in/out pad edge. t y p c i a l s - p arame t er da t a f or x l 1000 - b d vd = 5 .0 v, id = 52 m a f re qu e n c y s 1 1 s1 1 s 2 1 s2 1 s 1 2 s1 2 s 2 2 s2 2 (g h z ) ( m a g ) ( a ng ) ( m a g ) ( a ng ) ( m a g ) ( a ng ) ( m a g ) ( a ng ) 1 8 0 0 74 6 - 1 6 5 9 7 2 54 4 2 4 5 6 0 001 7 16 8 3 5 0 68 4 - 12 4 5 8 1 8 . 0 0 . 74 6 - 1 6 5 . 9 7 2 . 54 4 2 4 . 5 6 0 . 001 7 16 8 . 3 5 0 . 68 4 - 12 4 . 5 8 19. 0 0 .66 0 1 4 9.1 7 6.84 0 - 14.3 5 0.002 4 126.4 0 0.62 5 - 138.6 6 20. 0 0.14 2 2.0 0 14.71 5 - 120.6 1 0.002 1 52.5 9 0.53 4 - 163.1 2 21. 0 0 .10 0 - 1 63.2 0 13.15 2 - 170.2 4 0.001 8 12.1 9 0.47 4 176.6 3 22. 0 0 .14 0 1 2 9.5 1 12.23 7 154.8 0 0.001 7 - 16.4 2 0.39 5 152.5 0 23. 0 0 .17 0 8 6 .2 3 11.94 6 125.1 3 0.001 7 - 49.6 5 0.33 7 128.1 4 24. 0 0 .20 0 4 2 .3 0 12.00 3 84.1 1 0.002 8 - 88.1 7 0.28 6 90.5 4 25. 0 0 .21 1 2 1 .3 8 11.98 1 58.0 8 0.002 4 - 116.9 9 0.27 4 65.7 3 26. 0 0.21 2 3.8 2 11.91 4 33.3 0 0.002 9 - 127.8 7 0.26 9 43.2 1 27. 0 0 .19 1 - 1 6.1 3 11.57 3 - 2 .8 2 0 .003 4 - 150.8 3 0.26 3 15.0 0 28. 0 0 .17 6 - 2 5.8 2 11.18 1 - 25.5 8 0.003 8 - 173.2 1 0.25 4 - 0 .7 5 29. 0 0 .15 9 - 3 4.5 4 10.74 0 - 47.0 3 0.003 7 - 176.8 9 0.24 3 - 14.3 9 30. 0 0 .12 7 - 4 7.2 8 9.96 1 - 77.9 2 0.003 6 151.7 3 0.21 7 - 32.4 4 31. 0 0 .12 1 - 5 3.6 4 9.49 0 - 96.7 0 0.003 7 138.1 9 0.20 6 - 42.0 9 32. 0 0 .11 1 - 6 4.4 8 9.06 0 - 115.1 4 0.004 3 118.8 8 0.19 0 - 51.5 1 33. 0 0 .11 1 - 8 9.9 4 8.47 2 - 141.7 5 0.003 5 109.2 1 0.17 0 - 67.1 9 34. 0 0 .12 2 - 1 10.6 7 8.15 0 - 158.9 4 0.002 1 95.2 5 0.16 0 - 80.0 4 35. 0 0 .13 8 - 1 30.7 2 7.85 1 - 176.2 0 0.002 9 104.5 6 0.14 7 - 92.9 0 36. 0 0 .18 5 - 1 55.7 3 7.42 0 158.4 7 0.003 8 59.7 9 0.13 9 - 111.0 0 37. 0 0 .23 7 - 1 71.0 7 7.10 7 140.9 1 0.003 0 68.8 1 0.13 6 - 128.2 3 38. 0 0 .29 1 1 7 5.3 3 6.77 8 124.0 0 0.003 6 40.9 2 0.13 7 - 144.4 9 39. 0 0 .38 2 1 5 8.3 2 6.26 4 98.0 4 0.001 3 10.2 8 0.14 9 - 167.7 3 40. 0 0 .44 6 1 4 8.1 9 5.90 0 80.7 5 0.002 8 - 17.5 0 0.16 2 179.7 6 4 1 0 0 50 6 1 3 8 3 4 5 47 1 6 3 8 0 0 002 3 7 9 5 0 17 6 16 7 5 0 4 1 . 0 0 . 50 6 1 3 8 . 3 4 5 . 47 1 6 3 . 8 0 0 . 002 3 - 7 . 9 5 0 . 17 6 16 7 . 5 0 42. 0 0 .59 1 1 2 4.0 5 4.76 7 38.7 7 0.002 1 7.7 5 0.19 7 153.1 9 43. 0 0 .63 3 1 1 5.8 8 4.31 4 22.9 0 0.002 0 - 8 .9 3 0 .21 0 143.7 2
20.0-40.0 ghz gaas mmic low noise amplifier page 5 of 7 mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is 28ln3ua0338) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all bond pads are 0.100 x 0.100 (0.004 x 0.004). bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 1.239 mg. bond pad #1 (rf in) bond pad #2 (rf out) bond pad #3 (vd) bond pad #4 (vd) rf out rf in vd XL1000-BD 2 1 3 4 1.000 (0.039) 0.678 (0.027) 0.0 0.0 2.000 (0.079) 1.880 (0.074) 0.309 (0.012) 0.678 (0.027) 2 1 3 4 vd rf in rf out l1000-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 18-jan-10
20.0-40.0 ghz gaas mmic low noise amplifier page 6 of 7 app note [1] biasing - as shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. bias is nominally vd=3v, i=35ma or vd=5v, i=50ma. app note [2] bias arrangement - each dc pad (vd) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. l1000-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 18-jan-10 mttf graphs these numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at mimix broadband. the values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of device placement are the key parts in determining overall reliability for a specific application, see previous pages. if the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. XL1000-BD vd=5.0 v, id=50 ma 1 . 0 e + 1 5 1 . 0 e + 0 9 1 . 0 e + 1 0 1 . 0 e + 1 1 1 . 0 e + 1 2 1 . 0 e + 1 3 1 . 0 e + 1 4 mttf (hours) 1 . 0 e + 0 7 1 . 0 e + 0 8 5 5 . 0 6 5 . 0 7 5 . 0 8 5 . 0 9 5 . 0 1 0 5 . 0 1 15 . 0 1 2 5 . 0 backplate temperature (deg c) XL1000-BD vd=5.0 v, id=50 ma 1 . 00 e + 0 2 1 . 00 e - 0 4 1 . 00 e - 0 3 1 . 00 e - 0 2 1 . 00 e - 0 1 1 . 00 e + 0 0 1 . 00 e + 0 1 fits 1 . 00 e - 0 6 1 . 00 e - 0 5 55 . 0 6 5 . 0 7 5 . 0 85 . 0 95 . 0 1 0 5 . 0 1 1 5 . 0 1 25 . 0 backplate temperature (deg c) XL1000-BD vd=5.0 v, id=50 ma 5 6 5 7 5 8 4 7 4 8 4 9 5 0 5 1 5 2 5 3 5 4 5 5 5 6 rth (deg c/w) 4 6 4 7 5 5 . 0 6 5 . 0 75 . 0 8 5 . 0 9 5 . 0 1 05 . 0 1 1 5 . 0 1 2 5 . 0 backplate temperature (deg c) XL1000-BD vd=5.0 v, id=50 ma 14 0 15 0 7 0 8 0 9 0 10 0 11 0 12 0 13 0 tch (deg c) 6 0 5 5 . 0 6 5 . 0 7 5 . 0 85 . 0 95 . 0 10 5 . 0 11 5 . 0 1 2 5 . 0 backplate temperature (deg c)
20.0-40.0 ghz gaas mmic low noise amplifier page 7 of 7 l1000-bd handling and assembly information ordering information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280 oc (note: gold germanium should be avoided). the work station temperature should be 310 oc +/- 10 oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering description XL1000-BD-000v rohs compliant die packed in vacuum release gel paks XL1000-BD-ev1 xl1000 die evaluation module mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 18-jan-10 c a u t i o n : e s d s e n s i t i v e appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device.
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